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| SMD Type HEXFET Power MOSFET KRF7509 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS VGSM dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM N-Channel 30 2.7 2.1 21 1.25 0.8 10 20 30 5.0 P-Channel -30 -2 -1.6 -16 Unit V A @Ta= 25 @Ta= 70 PD W m W/ V V/ns -55 to + 150 100 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 1.7A, di/dt -1.2A, di/dt 120A/ 160A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7509 Electrical Characteristics TJ = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS =10V, ID = 1.7A*1 VGS = 4.5V, ID = 0.85A*1 VGS = -10V, ID = -1.2A*1 VGS = -4.5V, ID = -0.6A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 10V, ID = 0.85A*1 VDS = -10V, ID = -0.6A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125 VDS = -24V, VGS = 0V, TJ = 125 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -1.2A,VDS = -24V,VGS = -10V N-Channel VDD = 15V,ID = 1.7A,RG = 6.1 RD=8.7 P-Channel VDD = -15V,ID = -1.2A,RG = 6.2 RD=12 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 30 -30 Typ Max Unit V 0.059 0.039 0.09 0.110 0.14 0.175 0.17 0.30 1.0 -1.0 1.9 0.92 1.0 -1.0 25 -25 100 7.8 7.5 1.2 1.3 2.5 2.5 4.7 9.7 10 12 12 19 5.3 9.3 210 180 80 87 32 42 1.25 -1.25 21 -16 12 11 1.8 1.9 3.8 3.7 0.20 0.40 TJ RDS(on) RDS(on) VGS(th) gfs V/ V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Body Diode) IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VGS = 20V N-Channel ID = 1.7A,VDS = 24V,VGS =10V nC ns pF A Body Diode) *2 2 www.kexin.com.cn SMD Type KRF7509 Electrical Characteristics TJ = 25 Parameter Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Symbol VSD trr Qrr Testconditons TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -1.8A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 , IF=-1.2A,di/dt=-100A/ s*1 s*1 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 30 48 37 Min Typ Max 1.2 -1.2 60 45 72 55 IC IC Unit V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3 |
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